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| SM120MH~SM1100MH Elektronische Bauelemente 20 ~ 100 V 1.0 Amp Surface Mount Schottky Barrier Rectifiers RoHS Compliant Product A suffix of "-C" specifies halogen-free and RoHS Compliant FEATURES Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. Low profile surface mounted application. in order to optimize board space. Low power loss and low forward voltage drop High surge, high current capability, and high efficiency. Fast switching for high efficiency. Guard-ring for overvoltage protection. Ultra high-speed switching Silicon epitaxial planar chip, metal silicon junction. SOD-123MH A B F D C PACKAGING INFORMATION Small plastic SMD package. Case: Molded plastic Epoxy: UL94-V0 rate flame retardant Weight: 0.0110 g (Approximately) REF. A B C Millimeter Min. Max. 3.30 3.70 1.40 1.80 0.60 1.00 E E REF. D E F 1 Cathode 2 Anode Millimeter Min. Max. 3.10 (MAX.) 0.80 (TYP.) 0.30 (TYP.) MARKING CODE Part Number SM120MH SM130MH SM140MH SM150MH Marking Code 12 13 14 15 Part Number SM160MH SM180MH SM1100MH Marking Code 16 18 10 MAXIMUM RATINGS (Ta = 25C unless otherwise specified.) PART NUMBERS PARAMETERS Recurrent Peak Reverse Voltage (Max.) RMS Voltage (Max.) Reverse Voltage (Max.) Forward Voltage (Max.) Forward Rectified Current (Max.) Peak Forward Surge Current Reverse Current (Max.) Thermal Resistance (Typ.) Diode Junction Capacitance (Typ.) Storage and Operating Temperature Range SYMBOL SM 120 MH SM 130 MH SM 140 MH SM 150 MH SM 160 MH SM 180 MH SM 1100 MH UNITS TESTING CONDITIONS VRRM VRMS VR VF IO 20 14 20 30 21 30 0.50 40 28 40 50 35 50 0.70 1.0 60 42 60 80 56 80 100 70 100 0.85 V V V V A See Fig.1 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM IR RJA CJ TSTG, TJ -65 ~ 175, -55 to 125 25 0.5 10 98 120 -65 ~ 175, -55 to 150 A mA C/W pF C VR=VRRM, Ta=25C VR=VRRM, Ta=125C Junction to ambient f=1MHz and applied 4V DC reverse voltage 01-December-2008 Rev. A Page 1 of 2 SM120MH~SM1100MH Elektronische Bauelemente 20 ~ 100 V 1.0 Amp Surface Mount Schottky Barrier Rectifiers RATINGS AND CHARACTERISTIC CURVES FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CHARACTERISTICS 1.2 1.0 50 INSTANTANEOUS FORWARD CURRENT,(A) 0M H 0.8 MH 010 M1 ~S MH 015 H -M SM 40 M1 ~S MH 012 SM 0.6 0.4 0.2 0 0 20 40 60 80 10 3.0 1.0 SM 12 0M H~ SM 14 16 0M H H~ SM 100 120 140 160 180 200 SM 15 0M AMBIENT TEMPERATURE,( C) 18 SM 0- M 00 11 SM H~ -M H TJ=25 C Pulse Width 300us 1% Duty Cycle FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 25 0.1 PEAK FORWARD SURGE CURRENT,(A) 20 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 15 TJ=25 C 8.3ms Single Half Sine Wave JEDEC method FORWARD VOLT AGE,(V) 10 5 FIG.5 - TYPICAL REVERSE 0 1 5 10 50 100 CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL JUNCTION CAPACITANCE 350 300 250 200 150 100 50 0 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) 10 1.0 TJ=75 C .1 TJ=25 C .01 .05 .1 .5 1 5 10 50 100 .01 0 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) 01-December-2008 Rev. A Page 2 of 2 |
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